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| SMD Type Complementary enhancement mode MOS transistors KHC21025 Transistors IC Features High-speed switching No secondary breakdown Very low on-resistance. Absolute Maximum Ratings Ta = 25 Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Ts 80 Symbol VDSS VGS ID IDM Ts = 80 ; *2 Tamb = 25 ;*3 Ptot N-Channel 30 20 3.5 14 2 2 1 1.3 Tstg Tj IS ISM Rth j-s 1.5 6 35 -65 to 150 150 -1.25 -5 A A K/W W P-Channel -30 20 -2.3 -10 Unit V V A A peak drain current *1 total power dissipation Tamb = 25 ; * 4 Tamb = 25 storage temperature operating junction temperature source current (DC) Ts 80 ; *5 peak pulsed source current *1 thermal resistance from junction to soldering point *1 Pulse width and duty cycle limited by maximum junction temperature. *2 Maximum permissible dissipation per MOS transistor. Both devices may be loaded up to 2 W at the same time. *3 Maximum permissible dissipation per MOS transistor. Device mounted on printed-circuit board with an Rth a-tp (ambient to tie-point) of 27.5 K/W. *4 Maximum permissible dissipation per MOS transistor. Device mounted on printed-circuit board with an Rth a-tp (ambient to tie-point) of 90 K/W. *5 Maximum permissible dissipation if only one MOS transistor dissipates. Device mounted on printed-circuit board with an Rth a-tp (ambient to tie-point) of 90 K/W. www.kexin.com.cn 1 SMD Type KHC21025 Electrical Characteristics Ta = 25 Parameter drain-source breakdown voltage gate-source threshold voltage drain-source leakage current gate leakage current Symbol V(BR)DSS VGSth IDSS IGSS Testconditons VGS = 0; ID = 10 mA VGS = 0; ID = -10 mA VGS = VDS; ID = 1 mA VGS = VDS; ID = -1 mA VGS = 0; VDS = 24 V VGS = 0; VDS = -24 V VGS = 20 V; VDS = 0 Type N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch s s N-Ch P-Ch Transistors IC Min 30 -30 1 -1 Typ Max Unit V V 2.8 -2.8 100 -100 100 100 V V nA nA nA nA A A A A VGS = 10 V; VDS = 1 V on-state drain current IDon VGS = 4.5 V; VDS = 5 V VGS = -10 V; VDS = -1 V VGS = -4.5 V; VDS = -5 V VGS = 4.5 V; ID = 1 A drain-source on-state resistance RDSon VGS = 10 V; ID = 2.2 A VGS = -4.5 V; ID = - 0.5 A VGS = -10 V; ID = -1 A forward transfer admittance input capacitance output capacitance reverse transfer capacitance total gate charge gate-source charge gate-drain charge turn-on time turn-off time source-drain diode forward voltage reverse recovery time |yfs| Ciss Coss Crss QG QGS QGD ton toff VSD trr VDS = 20 V; ID = 2.2 A VDS = -20 V; ID = -1 A VGS = 0; VDS = 20 V; f = 1 MHz VGS = 0; VDS = -20 V; f = 1 MHz VGS = 0; VDS = 20 V; f = 1 MHz VGS = 0; VDS = -20 V; f = 1 MHz VGS = 0; VDS = 20 V; f = 1 MHz VGS = 0; VDS = -20 V; f = 1 MHz VGS = 10 V; VDS = 15 V; ID = 2.3 A VGS = -10 V; VDS = -15 V; ID = -2.3 A VGS = 10 V; VDS = 15 V; ID = 2.3 A VGS = -10 V; VDS = -15 V; ID = -2.3 A VGS = 10 V; VDS = 15 V; ID = 2.3 A VGS = -10 V; VDS = -15 V; ID = -2.3 A VGS =0 to 10 V; VDD=20V;ID=1A;RL=20 VGS=0 to -10V;VDD=-20V;ID=-1 A;RL=20 VGS=10 to 0 V;VDD=20V;ID=1A;RL=20 VGS=-10 to 0 V;VDD=-20V;ID=-1 A;RL=20 VGD = 0; IS = 1.25 A VGD = 0; IS = -1.25 A IS = 1.25 A; di/dt = 100 A/ IS = -1.25 A; di/dt = 100 A/ 3.5 2 -2.3 -1 0.11 0.08 0.33 0.22 2 1 4.5 2 250 250 140 140 50 50 10 10 1 1 2.5 3 15 20 25 50 40 80 140 140 1.2 -1.6 35 150 100 200 30 25 0.2 0.1 0.4 0.25 S S pF pF pF pF pF pF nC nC nC nC nC nC ns ns ns ns V V ns ns 2 www.kexin.com.cn |
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